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PROFET(R) BTS428L2 Smart High-Side Power Switch One Channel: 60m Status Feedback
Product Summary
On-state Resistance Operating Voltage Nominal load current Current limitation RON Vbb(on) IL(NOM) IL(SCr) 60m 4.75...41V 7.0A 17A
Package
TO 252-5-1 (D-Pak less than half the size of a TO-220 SMD)
1
General Description
* * N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and (R) diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions
Applications
* * * * C compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
* * * * * * * Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground
Protection Functions
* * * * * * * * Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN
ST
Logic with protection functions
OUT
Diagnostic Function
* * * Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state
PROFET GND
Load
Semiconductor Group
Page 1 of 12
1999-Feb-26
BTS428L2
Functional diagram
overvoltage protection internal voltage supply logic
gate control + charge pump
current limit
VBB
clamp for inductive load OUT
IN ESD ST GND
temperature sensor LOAD Open load detection
PROFET
Pin Definitions and Functions Pin 1 2 3 4 5 Tab Symbol GND IN Vbb ST OUT Vbb Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage The tab is shorted to pin 3 Diagnostic feedback, low on failure Output to the load Positive power supply voltage The tab is shorted to pin 3
Pin configuration (top view)
Tab = VBB
1
2
(3)
4
5
GND IN
ST OUT
Semiconductor Group
Page 2
1999-Feb-26
BTS428L2 Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 , RL= 4.0 , td= 400 ms, IN= low or high Load current (Current limit, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const. IL(ISO) = 7 A, RL = 0 ; E4)AS=0.19J: (See diagram on page 8)
Symbol Vbb Vbb
Values 43 24 60 self-limited -40 ...+150 -55 ...+150 75 5.6 1.0 4.0 8.0 -10 ... +16 2.0 5.0
Unit V V V A C W mH kV
VLoad dump3) IL Tj Tstg Ptot
ZL VESD
Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5k; C=100pF
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 7
VIN IIN IST
V mA
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA device on pcb5): Values typ max -- 1.67 -75 42 -Unit K/W
1) 2) 3) 4) 5)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch-off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
Page 3
1999-Feb-26
BTS428L2 Electrical Characteristics
Parameter and Conditions
at Tj =-40...+150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5)
IL = 2 A; VBB 7V
see diagram, page 9
Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh)
--
50 100 7.0 -100 100 ---
60 120 -2 200 200 1 1
m
Nominal load current, (pin 3 to 5)
ISO 10483-1, 6.7:VON=0.5V, TC=85C
5.8 -30 30 0.1 0.1
A mA s
Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0,
see diagram page 7 (not tested specified by design)
Turn-on time IN Turn-off time IN RL = 12 , Slew rate on 10 to 30% VOUT, RL = 12 , Slew rate off 70 to 40% VOUT, RL = 12 , Operating Parameters Operating voltage
to 90% VOUT: ton to 10% VOUT: toff dV /dton -dV/dtoff
V/s V/s
Tj =-40 Tj =+25...+150C: Overvoltage protection6) Tj =-40C: Ibb=40 mA Tj =25...+150C: Standby current (pin 3) 7) Tj=-40...+25C: VIN=0; see diagram on page 9 Tj= 150C: Off-State output current (included in Ibb(off)) VIN=0 Operating current 8), VIN=5 V
Vbb(on) Vbb(AZ) Ibb(off) IL(off) IGND
4.75 41 43 -----
---47 5 -1 0.8
41 43 -52 9 25 10 1.5
V V A A mA
6)
7
8)
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. Measured with load Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 4
1999-Feb-26
BTS428L2
Parameter and Conditions
at Tj =-40...+150C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions Current limit (pin 3 to 5)
(see timing diagrams on page 11)
IL(lim)
21 17 12 --41 43 150 ---28 22 16 17 7.5 36 31 24 --A
Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) Thermal shutdown time9 Tj,start = 25C: toff(SC)
(see timing diagrams on page 11)
A ms
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) 11 Reverse battery voltage drop (Vout > Vbb) ) IL = -2 A Tj=150 C: Diagnostic Characteristics Open load detection current
(on-condition)
VON(CL) Tjt Tjt -Vbb -VON(rev)
47 -10 -600
52 --32 --
V C K V mV
IL (OL)
10
--
500
mA
Input and Status Feedback12) Input resistance see circuit page 7 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Delay time for status with open load after switch off
(see timing diagrams on page 11)
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4)
2.5 1.7 1.5 -1 20 100
3.5 --0.5 -50 520
6 3.2 --50 90 900
k V V V A A s
Status output (open drain) Zener limit voltage ST low voltage
IST = +1.6 mA: VST(high) IST = +1.6 mA: VST(low)
5.4 --
6.1 --
-0.4
V
9)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). 11) Specified by design, not tested 12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
1999-Feb-26
BTS428L2 Truth Table
Input Normal operation Open load Overtemperature L = "Low" Level H = "High" Level level L H L H L H Output level L H Z H L L Status
BTS 428L2
H H H L H L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11)
Semiconductor Group
Page 6
1999-Feb-26
BTS428L2
Terms
Ibb I IN 2 I ST V V bb R IN V ST 4 ST GND 1 GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON
Overvolt. and reverse batt. protection
+ 5V + Vbb
R ST
IN
V
RI Logic
Z2
R ST ST
V Z1
OUT
PROFET
GND
R Load
R GND
Signal GND Load GND
Input circuit (ESD protection)
R IN I
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ.
Open-load detection in on-state Open load, if VON < RON*IL(OL); IN high
I GND I
+ V bb
ESD-ZD I
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
ON
VON
Status output
+5V
OUT
Logic unit
Open load detection
R ST(ON)
ST
GND
ESDZD
GND disconnect
3 IN Vbb PROFET OUT
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
2
5
Inductive and overvoltage output clamp
+ V bb
4 V bb V IN V ST
ST GND 1 V GND
V
Z
VON
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
OUT GND
PROFET
VON clamped to 47 V typ.
Semiconductor Group
Page 7
1999-Feb-26
BTS428L2
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb IN ST V V OUT
Inductive Load switch-off energy dissipation
E bb E AS
2
5
IN
Vbb PROFET OUT
ELoad
=
GND
ST GND ZL
EL
{
L RL ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT
Energy stored in load inductance:
EL = 1/2*L*I L
While demagnetizing load inductance, the energy dissipated in PROFET is
2
EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
5
with an approximate solution for RL > 0 : IL* L IL*RL EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V ) L OUT(CL)|
bb
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0
For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.
ZL [mH]
1000
100
10
1
0.1 2 7 12 17
IL [A]
Semiconductor Group
Page 8
1999-Feb-26
BTS428L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [m]
175 150 125 100 75 50 25 0 3 5 7 9 30 40
Vbb [V]
Tj=150C
25C -40C
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [A] 45
40 35 30 25 20 15 10 5 0 -50
0
50
100
150
200 Tj [C]
Semiconductor Group
Page 9
1999-Feb-26
BTS428L2
Timing diagrams
Figure 1a: Vbb turn on:
IN
Figure 2b: Switching a lamp,
IN
V bb
ST
V
OUT
V
OUT
ST open drain t
I
L
t
proper turn on under all conditions The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 30 A typ. of the device.
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:
Figure 2c: Switching an inductive load
IN
IN
VOUT
90% t on dV/dton 10% t dV/dtoff
ST
off
V
OUT
IL
I
L
t
I L(OL) t
*) if the time constant of load is too large, open-load-status may occur
Semiconductor Group
Page 10
1999-Feb-26
BTS428L2
Figure 3a: Short circuit shut down by overtemperature, reset by cooling
IN other channel: normal operation
Figure 5a: Open load: detection in ON-state, open load occurs in on-state
IN
t d(ST OL)
I
t
ST
L
d(ST OL)
I
L(lim) I L(SCr)
VOUT
t ST
off(SC)
I
t
normal
L
open
normal
t
td(ST OL) = 10 s typ.
Heating up of the chip may require several milliseconds, depending on external conditions
Figure 4a: Overtemperature: Reset if Tj IN
Figure 5b: Open load: turn on/off to open load
IN
ST
ST
t
d(STOL4)
V
I
L
OUT
t
T
J
t
Semiconductor Group
Page 11
1999-Feb-26
BTS428L2
Package and Ordering Code
All dimensions in mm
Dpak-5 Pin: P-TO252-5-1
Sales code Ordering code
+0.15 6.5 -0.10
BTS428L2 Q67060-S7403-A2
2.3 +0.05 -0.10 B A 1 0.1 0...0.15 0.9 +0.08 -0.04
1 0.1
5.4 0.1
0.15 max per side
5x0.6 0.1 1.14
0.5 +0.08 -0.04 0.1
4.56
0.25
M
AB
GPT09161
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1999. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. The characteristics for which SIEMENS grants a warranty will only be specified in the purchase contract. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be 13 expressly authorised for such purpose! Critical components ) of the Semiconductor Group of Siemens AG, may only be used in life 14 supporting devices or systems ) with the express written approval of the Semiconductor Group of Siemens AG.
9.9 0.5 6.22 -0.2
0.8 0.15
(4.17)
All metal surfaces tin plated, except area of cut.
0.51 min
13)
14)
A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 12
1999-Feb-26

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